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HGTD7N60C3S, HGTP7N60C3
Data Sheet December 2001
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49115.
Features
* 14A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE
Ordering Information
PART NUMBER HGTD7N60C3S HGTP7N60C3 PACKAGE TO-252AA TO-220AB BRAND G7N60C
COLLECTOR (FLANGE)
JEDEC TO-252AA G7N60C3
GATE EMITTER COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTD7N60C3S HGTP7N60C3 600 14 7 56 20 30 40A at 480V 60 0.48 100 -40 to 150 260 1 8 UNITS V A A A V V W W/oC mJ oC oC s s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 16 3.0 TYP 30 1.6 1.9 5.0 MAX 250 2.0 2.0 2.4 6.0 250 UNITS V V A mA V V V
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH
Gate to Emitter Threshold Voltage
VGE(TH) IGES SSOA
Gate to Emitter Leakage Current Switching SOA
VCE(PK) = 480V VCE(PK) = 600V 40 6
-
nA A A
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
8 23 30
30 38
V nC nC
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF RJC TEST CONDITIONS TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG= 50 L = 1.0mH MIN TYP 8.5 11.5 350 140 165 600 MAX 400 275 2.1 UNITS ns ns ns ns J J
oC/W
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE <0.5%, VCE = 10V 35 PULSE DURATION = 250s 30 25 20 15 TC = -40oC 10 5 0 4 6 8 10 12 14 VGE , GATE TO EMITTER VOLTAGE (V) TC = 150oC TC = 25oC 40 PULSE DURATION = 250s, 35 DUTY CYCLE <0.5%, TC = 25oC 30 25 20 9.0V 15 8.5V 10 5 0 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8.0V 7.5V 7.0V 10 VGE = 15.0V 12.0V
10.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
40 PULSE DURATION = 250s 35 DUTY CYCLE <0.5%, VGE = 10V 30 25 20 15 10 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC TC = 25oC TC = -40oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
40 35 30 25 20 15 10 5 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC
TC = 150oC
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves
15 ICE , DC COLLECTOR CURRENT (A)
(Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (S)
12
10 ISC 8
120
9
100
6
6
80
3
4 tSC 2 10 11 12 13 14
60
0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
40 15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE
50 td(ON)I , TURN-ON DELAY TIME (ns) 40 30 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 500 td(OFF)I , TURN-OFF DELAY TIME (ns) 450 400 350
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
20 VGE = 10V VGE = 15V 10
VGE = 10V OR 15V 300
250
5 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
200 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
200
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
300 250 tfI , FALL TIME (ns)
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
trI , TURN-ON RISE TIME (ns)
100 VGE = 10V
200 VGE = 10V or 15V 150
VGE = 15V 10
5 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
100
2
5
8
11
14
17
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT(A)
VGE = 15V
12
VCE = 360V, RG = 50, TJ = 125oC
140
HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves
2000 EON , TURN-ON ENERGY LOSS (J)
(Continued)
3000 EOFF , TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V
1000 VGE = 10V 500 VGE = 15V
1000
500
VGE = 10V or 15V
100
40 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
100 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
200 fMAX , OPERATING FREQUENCY (kHz) 100
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A) 50
TJ = 150oC, TC = 75oC RG = 50, L = 1mH
TJ = 150oC, VGE = 15V, RG = 50, L = 1mH
40
VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF)
VGE = 15V
30
10
20
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) 1 2 RJC = 2.1oC/W 10 20 30
10
0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FREQUENCY = 1MHz CIES
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
1200 1000 C, CAPACITANCE (pF) 800 600 400 200 CRES 0 0 5 10 15
500 400 300 200 VCE = 400V 100 0 0 5 10 15 20 25 QG , GATE CHARGE (nC) VCE = 200V VCE = 600V
12.5 10 7.5 5 2.5 0 30
COES 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
VGE , GATE TO EMITTER VOLTAGE (V)
600
IG(REF) = 1.044mA, RL = 50, TC = 25oC 15
HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
(Continued)
100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-4 10-5 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 100 PD t2 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH RHRD660 VGE RG = 50 +
90% 10% EOFF VCE VDD = 480V ICE 90% 10% td(OFF)I tfI trI td(ON)I EON
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3 Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Figure 13 is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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